Bao and coworkers reported n-type OPTs utilizing n-channel organic nanowire. 18–20 Recently, important progress has been made on n-type OPTs.

17 As for n-type OPTs, reports in the past often utilized F 16CuPc as the active layer, the photo sensitivities were all below 3 × 10 −3 AW −1. fabricated a single-crystalline OPT with maximum R of nearly 10 5 AW −1. reported a highly sensitive thin-film OPT with maximum photo responsivity (R) of 4.5 × 10 4 AW −1.

13–15 On the other hand, most reports are focused on p-type OPTs, and researches on n-type OPTs are very rare, possibly due to the reason that the progress of n-type materials lags well behind p-type materials. 9,10 While the inorganic phototransistors have been commercially available, 11,12 OPTs are less studied although OPTs possess the characteristics of light weight, low cost, and high flexibility. 6–8 Compared with photodiodes which have two electrodes, phototransistors could provide higher photo sensitivity due to the presence of gate electrode.

1–5 Organic phototransistors (OPTs) are photosensitive OFETs in which the incident light can modulate the charge-carrier density in the channel. The last two decades have witnessed the tremendous developments in organic field-effect transistors (OFETs), which are the competitive alternatives of silicon counterparts as the basic building blocks of integrated circuits (ICs) and drivers for active-matrix displays.

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